Invention Grant
- Patent Title: Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
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Application No.: US17399118Application Date: 2021-08-11
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Publication No.: US11552182B2Publication Date: 2023-01-10
- Inventor: Chang Woo Sohn , Seung Hyun Song , Seon-Bae Kim , Min Cheol Oh , Young Chai Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.
Public/Granted literature
Information query
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