公开(公告)号：US20210376126A1

公开(公告)日：2021-12-02

申请号：US17399118

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Sohn ,  Seung Hyun Song ,  Seon-Bae Kim ,  Min Cheol Oh ,  Young Chai Jung

IPC: H01L29/66

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

公开(公告)号：US11107906B2

公开(公告)日：2021-08-31

申请号：US16798482

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Sohn ,  Seung Hyun Song ,  Seon-Bae Kim ,  Min Cheol Oh ,  Young Chai Jung

IPC: H01L29/66

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.

公开(公告)号：US12132105B2

公开(公告)日：2024-10-29

申请号：US17571949

申请日：2022-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hojun Choi ,  Ji Seong Kim ,  Min Cheol Oh ,  Ki-Il Kim

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7827 ,  H01L21/823814 ,  H01L21/823885 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/42368 ,  H01L29/66666

Abstract: There is provided a semiconductor device capable of improving electrical characteristics and integration density. The semiconductor device includes an active pattern protruding from a substrate, the active pattern including long sidewalls extending in a first direction and opposite to each other in a second direction, a lower epitaxial pattern on the substrate and covering a part of the active pattern, a gate electrode on the lower epitaxial pattern and extending along the long sidewalls of the active pattern, and an upper epitaxial pattern on the active pattern and connected to an upper surface of the active pattern. The active pattern includes short sidewalls connecting with the long sidewalls of the active pattern, and at least one of the short sidewalls of the active pattern has a curved surface.

公开(公告)号：US11552182B2

公开(公告)日：2023-01-10

申请号：US17399118

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Sohn ,  Seung Hyun Song ,  Seon-Bae Kim ,  Min Cheol Oh ,  Young Chai Jung

IPC: H01L29/66

Abstract: Integrated circuit devices and methods of forming the same are provided. The methods may include forming a dummy channel region and an active region of a substrate, forming a bottom source/drain region on the active region, forming a gate electrode on one of opposing side surfaces of the dummy channel region, and forming first and second spacers on the opposing side surfaces of the dummy channel region, respectively. The gate electrode may include a first portion on the one of the opposing side surfaces of the dummy channel region and a second portion between the bottom source/drain region and the first spacer. The methods may also include forming a bottom source/drain contact by replacing the first portion of the gate electrode with a conductive material. The bottom source/drain contact may electrically connect the second portion of the gate electrode to the bottom source/drain region.