Invention Grant
- Patent Title: Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
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Application No.: US16932275Application Date: 2020-07-17
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Publication No.: US11557474B2Publication Date: 2023-01-17
- Inventor: John Tolle , Joe Margetis , David Kohen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: C23C16/30
- IPC: C23C16/30 ; H01L21/02 ; H01L29/08 ; H01L29/66 ; C23C16/458 ; C23C16/02 ; C23C16/52 ; C23C16/22 ; C23C16/44 ; C23C16/46 ; C23C16/455
Abstract:
A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.
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