- 专利标题： Reduction of drain leakage in nanosheet device
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申请号： US16743256申请日： 2020-01-15
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公开(公告)号： US11563082B2公开(公告)日： 2023-01-24
- 发明人: Pouya Hashemi , Takashi Ando , Alexander Reznicek , Ruilong Xie
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Jeffrey S. LaBaw
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/311 ; H01L21/02 ; H01L29/49 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L29/786 ; B82Y10/00
摘要：
A semiconductor device including at least one nanosheet and epitaxial source and drain regions are present on opposing ends of the at least one nanosheet. A gate structure is present on a channel of the at least one nanosheet. The gate structure includes a first work function metal gate portion present at a junction portion of the source and drain regions that interfaces with the channel portion of the at least one nanosheet, and a second work function metal gate portion present on a central portion of the channel of the at least one nanosheet. The amount of metal containing nitride in the second work function metal gate portion is greater than an amount of metal containing nitride in the first work function metal gate portion. The device further includes a rotated T-shaped dielectric spacer present between the gate structure and the epitaxial source and drain regions.
公开/授权文献
- US20210217846A1 REDUCTION OF DRAIN LEAKAGE IN NANOSHEET DEVICE 公开/授权日：2021-07-15
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