- 专利标题： Mitigating moisture-driven degradation of features designed to prevent structural failure of semiconductor wafers
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申请号： US17113032申请日： 2020-12-05
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公开(公告)号： US11569181B2公开(公告)日： 2023-01-31
- 发明人: Sushumna Iruvanti , Shidong Li , Steve Ostrander , Jon Alfred Casey , Brian Richard Sundlof
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Otterstedt & Kammer PLLC
- 代理商 Kelsey M. Skodje
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/02 ; H01L23/26 ; H01L21/768
摘要：
Moisture-driven degradation of a crack stop in a semiconductor die is mitigated by forming a groove in an upper surface of the die between an edge of the die and the crack stop; entirely filling the groove with a moisture barrier material; preventing moisture penetration of the semiconductor die by presence of the moisture barrier material; and dissipating mechanical stress in the moisture barrier material without presenting a stress riser in the bulk portion of the die. The moisture barrier material is at least one of moisture-absorbing, moisture adsorbing, and hydrophobic.
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