Invention Grant
- Patent Title: Local interconnect with air gap
-
Application No.: US16430977Application Date: 2019-06-04
-
Publication No.: US11594485B2Publication Date: 2023-02-28
- Inventor: Kevin L. Lin , Scott B. Clendenning , Tristan A. Tronic , Urusa Alaan , Ehren Mannebach
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L23/522 ; H01L21/768 ; H01L21/311 ; H01L21/3105

Abstract:
An integrated circuit includes a base comprising an insulating dielectric. A plurality of conductive lines extends vertically above the base in a spaced-apart arrangement, the plurality including a first conductive line and a second conductive line adjacent to the first conductive line. A void is between the first and second conductive lines. A cap of insulating material is located above the void and defines an upper boundary of the void such that the void is further located between the base and the cap of insulating material. In some embodiments, one or more vias contacts an upper end of one or more of the conductive lines.
Information query
IPC分类: