- 专利标题： Devices including gate spacer with gap or void and methods of forming the same
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申请号： US17120553申请日： 2020-12-14
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公开(公告)号： US11594619B2公开(公告)日： 2023-02-28
- 发明人: Kuo-Cheng Chiang , Ching-Wei Tsai , Chi-Wen Liu , Ying-Keung Leung
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/165 ; H01L29/08 ; H01L21/02 ; H01L21/283 ; H01L29/78 ; H01L21/768
摘要：
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.
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