Invention Grant
- Patent Title: Non volatile resistive memory logic device
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Application No.: US17109296Application Date: 2020-12-02
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Publication No.: US11600325B2Publication Date: 2023-03-07
- Inventor: Hsueh-Chung Chen , Mary Claire Silvestre , Soon-Cheon Seo , Chi-Chun Liu , Fee Li Lie , Chih-Chao Yang , Yann Mignot , Theodorus E. Standaert
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Matthew Zehrer
- Main IPC: G11C11/08
- IPC: G11C11/08 ; G11C13/00 ; G11C11/16 ; H03K19/20
Abstract:
A resistance switching RAM logic device is presented. The device includes a pair of resistance switching RAM cells that may be independently programed into at least a low resistance state (LRS) or a high resistance state (HRS). The resistance switching RAM logic device may further include a shared output node electrically connected to the pair of resistance switching RAM cells. A logical output may be determined from the programmed resistance state of each of the resistance switching RAM cells.
Public/Granted literature
- US20220172776A1 NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE Public/Granted day:2022-06-02
Information query
