Invention Grant
- Patent Title: Ion source with biased extraction plate
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Application No.: US17150031Application Date: 2021-01-15
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Publication No.: US11600473B2Publication Date: 2023-03-07
- Inventor: Svetlana B. Radovanov , Bon-Woong Koo , Alexandre Likhanskii
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/24 ; H01J37/08

Abstract:
An ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.
Public/Granted literature
- US20210134569A1 Ion Source With Biased Extraction Plate Public/Granted day:2021-05-06
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