Invention Grant
- Patent Title: RF voltage and current (V-I) sensors and measurement methods
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Application No.: US16913526Application Date: 2020-06-26
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Publication No.: US11600474B2Publication Date: 2023-03-07
- Inventor: Barton Lane , Merritt Funk , Yohei Yamazawa , Justin Moses , Chelsea Dubose , Michael Hummel
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/24

Abstract:
A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.
Public/Granted literature
- US20210407775A1 RF Voltage and Current (V-I) Sensors and Measurement Methods Public/Granted day:2021-12-30
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