Invention Grant
- Patent Title: Substrate processing method
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Application No.: US17371384Application Date: 2021-07-09
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Publication No.: US11600500B2Publication Date: 2023-03-07
- Inventor: Kouzou Tachibana , Katsuhiro Morikawa , Kouichi Mizunaga
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2020-120778 20200714
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/687 ; H01L21/02 ; B08B3/02 ; B08B3/08 ; B08B3/10 ; B08B13/00 ; H05B1/02 ; H05B3/26 ; B08B3/04

Abstract:
A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.
Public/Granted literature
- US20220020611A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2022-01-20
Information query
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