公开(公告)号：US11842906B2

公开(公告)日：2023-12-12

申请号：US17184688

申请日：2021-02-25

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  F27D7/06 ,  H01L21/677 ,  H01L21/687 ,  F27D19/00

CPC classification number: H01L21/67109 ,  F27D7/06 ,  H01L21/6719 ,  H01L21/67103 ,  H01L21/67739 ,  H01L21/68742 ,  F27D19/00

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

公开(公告)号：US20230120387A1

公开(公告)日：2023-04-20

申请号：US18046567

申请日：2022-10-14

Applicant: Tokyo Electron Limited

Inventor： Kouichi Mizunaga ,  Toshichika Takei

IPC: G03F7/20 ,  H01L21/687 ,  H01L21/683

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

公开(公告)号：US11868056B2

公开(公告)日：2024-01-09

申请号：US18046567

申请日：2022-10-14

Applicant: Tokyo Electron Limited

Inventor： Kouichi Mizunaga ,  Toshichika Takei

IPC: G03F7/00 ,  H01L21/683 ,  H01L21/687

CPC classification number: G03F7/70875 ,  H01L21/6838 ,  H01L21/6875 ,  H01L21/68742

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

公开(公告)号：US11600500B2

公开(公告)日：2023-03-07

申请号：US17371384

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Kouzou Tachibana ,  Katsuhiro Morikawa ,  Kouichi Mizunaga

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  B08B3/10 ,  B08B13/00 ,  H05B1/02 ,  H05B3/26 ,  B08B3/04

Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

公开(公告)号：US20190096716A1

公开(公告)日：2019-03-28

申请号：US16136793

申请日：2018-09-20

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  H01L21/677 ,  F27D7/06

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

公开(公告)号：US20240094645A1

公开(公告)日：2024-03-21

申请号：US18526350

申请日：2023-12-01

Applicant: Tokyo Electron Limited

Inventor： Kouichi Mizunaga ,  Toshichika Takei

IPC: G03F7/00 ,  H01L21/683 ,  H01L21/687

CPC classification number: G03F7/70875 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/6875

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

公开(公告)号：US20220020611A1

公开(公告)日：2022-01-20

申请号：US17371384

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Kouzou Tachibana ,  Katsuhiro Morikawa ,  Kouichi Mizunaga

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  B08B3/04 ,  B08B3/10 ,  B08B13/00 ,  H05B1/02 ,  H05B3/26

Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

公开(公告)号：US11551945B2

公开(公告)日：2023-01-10

申请号：US16583550

申请日：2019-09-26

Applicant: Tokyo Electron Limited

Inventor： Katsuhiro Morikawa ,  Masami Akimoto ,  Satoshi Morita ,  Kouichi Mizunaga

IPC: H01L21/67 ,  H01L21/304 ,  B08B3/04 ,  H01L21/02

Abstract: A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; a processing liquid nozzle configured to supply a processing liquid onto a top surface of the substrate; an electric heater provided at a top plate and configured to heat the substrate through the top plate; an electronic component configured to perform a power feed to the electric heater and transmission/reception of a control signal for the electric heater; and a periphery cover body connected to a peripheral portion of the top plate to be rotated along with the top plate. An accommodation space in which the electronic component is accommodated is formed under the top plate. The accommodation space is surrounded by a surrounding structure including the top plate and the periphery cover body. A gap between the peripheral portion of the top plate and the periphery cover body is sealed.

公开(公告)号：US11208725B2

公开(公告)日：2021-12-28

申请号：US16583628

申请日：2019-09-26

Applicant: Tokyo Electron Limited

Inventor： Kouichi Mizunaga ,  Masami Akimoto ,  Satoshi Morita ,  Katsuhiro Morikawa

IPC: C23C18/16 ,  H01L21/683 ,  H01L21/67 ,  B05C13/02

Abstract: A substrate processing apparatus includes a rotary table comprising a base plate having a front surface where at least one suction hole is provided and an attraction plate having a front surface contacted with a non-processing surface of a substrate to attract the substrate, a rear surface contacted with the front surface of the base plate, and at least one through hole through which the front surface and the rear surface are connected; a rotation driving device configured to rotate the rotary table around a rotation axis; and a suction device configured to act a suction force on the suction hole, to contact the base plate with the attraction plate by acting the suction force between the base plate and the attraction plate, and to firmly contact the attraction plate with the substrate by acting the suction force between the attraction plate and the substrate through the through hole.

公开(公告)号：US10964564B2

公开(公告)日：2021-03-30

申请号：US16136793

申请日：2018-09-20

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  F27D7/06 ,  H01L21/677 ,  H01L21/687 ,  F27D19/00

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.