- Patent Title: Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same
-
Application No.: US16691772Application Date: 2019-11-22
-
Publication No.: US11600712B2Publication Date: 2023-03-07
- Inventor: Sanghyun Jo , Sangwook Kim , Yunseong Lee , Jinseong Heo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0167586 20181221
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L27/06 ; H01L49/02
Abstract:
A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.
Information query
IPC分类:
