公开(公告)号：US12132133B2

公开(公告)日：2024-10-29

申请号：US18338631

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L29/66 ,  G01S7/481 ,  G01S17/931 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/101 ,  H01L31/107 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/00 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312

CPC classification number: H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L2031/0344 ,  H01L31/035218

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US11894469B2

公开(公告)日：2024-02-06

申请号：US16811549

申请日：2020-03-06

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sanghyun Jo ,  Heejun Yang ,  Hyeonjin Shin ,  Shoujun Zheng

IPC: H01L29/00 ,  H01L29/88 ,  H01L29/267 ,  H01L29/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66 ,  H01L31/032 ,  H01L29/16

CPC classification number: H01L29/882 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/417 ,  H01L29/66977 ,  H01L31/032

Abstract: A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.

公开(公告)号：US11888016B2

公开(公告)日：2024-01-30

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Eunkyu Lee ,  Seongjun Park ,  Kiyoung Lee ,  Jinseong Heo

IPC: H01L27/146 ,  H01L31/0264 ,  B82Y15/00 ,  H01L31/074

CPC classification number: H01L27/14667 ,  H01L27/14636 ,  H01L31/0264 ,  H01L31/074 ,  B82Y15/00

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US11721781B2

公开(公告)日：2023-08-08

申请号：US17857466

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Jo ,  Jaeho Lee ,  Haeryong Kim ,  Hyeonjin Shin

IPC: H01L21/76 ,  H01L23/48 ,  H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  G01S17/931 ,  H10K39/32 ,  H01L31/0304 ,  H01L31/0296 ,  H01L31/0312 ,  H01L31/0256 ,  G05D1/02

CPC classification number: H01L31/1075 ,  G01S7/4816 ,  G01S7/4817 ,  G01S17/931 ,  H01L27/14643 ,  H01L27/14647 ,  H01L31/028 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/03529 ,  H01L31/035209 ,  H01L31/035281 ,  H01L31/1013 ,  H01S5/0687 ,  H10K39/32 ,  G05D1/024 ,  G05D2201/0213 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0324 ,  H01L31/035218 ,  H01L2031/0344

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US11527646B2

公开(公告)日：2022-12-13

申请号：US17026665

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee ,  Sanghyun Jo

IPC: H01L29/78 ,  H01L21/28 ,  G11C11/22 ,  H01L29/66

Abstract: A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.

公开(公告)号：US11417763B2

公开(公告)日：2022-08-16

申请号：US16682512

申请日：2019-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook Kim ,  Yunseong Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/51 ,  H01L21/8234 ,  H01L21/28 ,  H01L29/66

Abstract: An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.

公开(公告)号：US11177283B2

公开(公告)日：2021-11-16

申请号：US16893888

申请日：2020-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo

IPC: H01L27/1159 ,  H01L29/78 ,  H01L29/66 ,  G11C11/22 ,  H01L21/28 ,  G06N3/063

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.

公开(公告)号：US20200350442A1

公开(公告)日：2020-11-05

申请号：US16811549

申请日：2020-03-06

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sanghyun Jo ,  Heejun Yang ,  Hyeonjin Shin ,  Shoujun Zheng

IPC: H01L29/88 ,  H01L29/267 ,  H01L29/66 ,  H01L47/00 ,  G01K7/16 ,  G01J1/42 ,  G01N27/22 ,  G01N27/04

Abstract: A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.

公开(公告)号：US20180197956A1

公开(公告)日：2018-07-12

申请号：US15825344

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L29/16 ,  H01L31/0352 ,  H01L27/146 ,  H01L27/15 ,  H01L27/144 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US12206009B2

公开(公告)日：2025-01-21

申请号：US18513042

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Yunseong Lee ,  Taehwan Moon ,  Sanghyun Jo

IPC: H01L29/51 ,  H01L21/28 ,  H10B51/00 ,  H10B51/30

Abstract: An electronic device includes a seed layer including a two-dimensional (2D) material, and a ferroelectric layer on the seed layer. The ferroelectric layer is configured to be aligned in a direction in which a (111) crystal direction is perpendicular to a top surface of a substrate on which the seed layer is located and/or a top surface of the seed layer.