Invention Grant
- Patent Title: Method and apparatus for fabrication of very large scale integration pattern features via electroless deposition on extreme ultraviolet lithography photomasks
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Application No.: US16521445Application Date: 2019-07-24
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Publication No.: US11604406B2Publication Date: 2023-03-14
- Inventor: John Magana , Guojing Zhang , Yang Cao
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G03F1/24
- IPC: G03F1/24

Abstract:
Embodiments disclosed herein include EUV reticles and methods of forming such reticles. In an embodiment a method of forming an EUV reticle comprises providing a reticle, where the reticle comprises, a substrate, a mirror layer over the substrate, where the mirror layer comprises a plurality of first mirror layers and second mirror layers in an alternating pattern, and a capping layer over the mirror layer. In an embodiment, the method may further comprise disposing a first layer over the capping layer, patterning an opening in the first layer, and disposing a second layer in the opening, where the second layer is disposed with an electroless deposition process.
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