- 专利标题: Method and apparatus for fabrication of very large scale integration pattern features via electroless deposition on extreme ultraviolet lithography photomasks
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申请号: US16521445申请日: 2019-07-24
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公开(公告)号: US11604406B2公开(公告)日: 2023-03-14
- 发明人: John Magana , Guojing Zhang , Yang Cao
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: G03F1/24
- IPC分类号: G03F1/24
摘要:
Embodiments disclosed herein include EUV reticles and methods of forming such reticles. In an embodiment a method of forming an EUV reticle comprises providing a reticle, where the reticle comprises, a substrate, a mirror layer over the substrate, where the mirror layer comprises a plurality of first mirror layers and second mirror layers in an alternating pattern, and a capping layer over the mirror layer. In an embodiment, the method may further comprise disposing a first layer over the capping layer, patterning an opening in the first layer, and disposing a second layer in the opening, where the second layer is disposed with an electroless deposition process.
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