Real-time detection of deflections and ruptures of EUV pellicle membranes

    公开(公告)号:US12209975B2

    公开(公告)日:2025-01-28

    申请号:US17883678

    申请日:2022-08-09

    Abstract: The present disclosure is directed to a reticle assembly having a reticle and a pellicle attached to a pellicle support frame positioned on the reticle and includes a sensor assembly having optical and sensor components, which monitor the pellicle. The optical components and the sensor components of the sensor assembly may be coupled to a controller, which may be further coupled to one or more semiconductor process tools.

    MONOLITHICALLY FRAMED PELLICLE MEMBRANE SUITABLE FOR LITHOGRAPHY IN THE FABRICATION OF INTEGRATED CIRCUITS

    公开(公告)号:US20220075259A1

    公开(公告)日:2022-03-10

    申请号:US17530755

    申请日:2021-11-19

    Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

    Monolithically framed pellicle membrane suitable for lithography in the fabrication of integrated circuits

    公开(公告)号:US11561466B2

    公开(公告)日:2023-01-24

    申请号:US17530755

    申请日:2021-11-19

    Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

    Monolithically framed pellicle membrane suitable for lithography in the fabrication of integrated circuits

    公开(公告)号:US11194246B1

    公开(公告)日:2021-12-07

    申请号:US16832456

    申请日:2020-03-27

    Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.

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