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公开(公告)号:US12209975B2
公开(公告)日:2025-01-28
申请号:US17883678
申请日:2022-08-09
Applicant: Intel Corporation
Inventor: John Ferdinand Magana , Guojing Zhang
IPC: G01N21/958
Abstract: The present disclosure is directed to a reticle assembly having a reticle and a pellicle attached to a pellicle support frame positioned on the reticle and includes a sensor assembly having optical and sensor components, which monitor the pellicle. The optical components and the sensor components of the sensor assembly may be coupled to a controller, which may be further coupled to one or more semiconductor process tools.
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公开(公告)号:US11604406B2
公开(公告)日:2023-03-14
申请号:US16521445
申请日:2019-07-24
Applicant: Intel Corporation
Inventor: John Magana , Guojing Zhang , Yang Cao
IPC: G03F1/24
Abstract: Embodiments disclosed herein include EUV reticles and methods of forming such reticles. In an embodiment a method of forming an EUV reticle comprises providing a reticle, where the reticle comprises, a substrate, a mirror layer over the substrate, where the mirror layer comprises a plurality of first mirror layers and second mirror layers in an alternating pattern, and a capping layer over the mirror layer. In an embodiment, the method may further comprise disposing a first layer over the capping layer, patterning an opening in the first layer, and disposing a second layer in the opening, where the second layer is disposed with an electroless deposition process.
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公开(公告)号:US11300885B2
公开(公告)日:2022-04-12
申请号:US16045253
申请日:2018-07-25
Applicant: Intel Corporation
Inventor: Robert Bristol , Guojing Zhang , Tristan Tronic , John Magana , Chang Ju Choi , Arvind Sundaramurthy , Richard Schenker
Abstract: Embodiments described herein comprise extreme ultraviolet (EUV) reticles and methods of forming EUV reticles. In an embodiment, the reticle may comprise a substrate and a mirror layer over the substrate. In an embodiment, the mirror layer comprises a plurality of alternating first mirror layers and second mirror layers. In an embodiment, a phase-shift layer is formed over the mirror layer. In an embodiment, openings for printable features and openings for non-printable features are formed into the phase-shift layer. In an embodiment, the non-printable features have a dimension that is smaller than a dimension of the printable features.
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公开(公告)号:US20220075259A1
公开(公告)日:2022-03-10
申请号:US17530755
申请日:2021-11-19
Applicant: Intel Corporation
Inventor: John Magana , Guojing Zhang
IPC: G03F1/64
Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.
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公开(公告)号:US11561466B2
公开(公告)日:2023-01-24
申请号:US17530755
申请日:2021-11-19
Applicant: Intel Corporation
Inventor: John Magana , Guojing Zhang
IPC: G03F1/64
Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.
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公开(公告)号:US11194246B1
公开(公告)日:2021-12-07
申请号:US16832456
申请日:2020-03-27
Applicant: Intel Corporation
Inventor: John Magana , Guojing Zhang
IPC: G03F1/64
Abstract: Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.
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