- 专利标题: Trench filling through reflowing filling material
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申请号: US16939718申请日: 2020-07-27
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公开(公告)号: US11605555B2公开(公告)日: 2023-03-14
- 发明人: Wen-Yen Chen , Li-Ting Wang , Wan-Chen Hsieh , Bo-Cyuan Lu , Tai-Chun Huang , Huicheng Chang , Yee-Chia Yeo
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/762
- IPC分类号: H01L21/762 ; H01L21/768 ; H01L21/02 ; H01L21/764
摘要:
A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.
公开/授权文献
- US20210327749A1 Trench Filling Through Reflowing Filling Material 公开/授权日:2021-10-21
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