Invention Grant
- Patent Title: Methods of forming doped silicide power devices
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Application No.: US17102148Application Date: 2020-11-23
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Publication No.: US11605741B2Publication Date: 2023-03-14
- Inventor: Joshua S. Holt , Lan Yu , Tyler Sherwood , Archana Kumar , Nicolas Louis Gabriel Breil , Siddarth Krishnan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L21/28 ; H01L29/45 ; H01L29/861 ; H01L29/66 ; H01L29/47
Abstract:
Exemplary methods of forming a semiconductor structure may include forming a layer of metal on a semiconductor substrate. The layer of metal may extend along a first surface of the semiconductor substrate. The semiconductor substrate may be or include silicon. The methods may include performing an anneal to produce a metal silicide. The methods may include implanting ions in the metal silicide to increase a barrier height over 0.65 V.
Public/Granted literature
- US20220165574A1 METHODS OF FORMING DOPED SILICIDE POWER DEVICES Public/Granted day:2022-05-26
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