Invention Grant
- Patent Title: Non-volatile resistive memory device including a plurality of write modes
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Application No.: US16870506Application Date: 2020-05-08
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Publication No.: US11636895B2Publication Date: 2023-04-25
- Inventor: Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0140134 20191105
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00 ; H01L27/24 ; H03K19/20 ; H03K19/21

Abstract:
A writing method for a non-volatile memory device includes; performing a sensing operation, comparing write data with read data retrieved by the sensing operation, determining whether the write data is set state when the write data and the read data are the same, performing a set operation when the write data is set state, and not performing a write operation when the write data is not set data.
Public/Granted literature
- US20210134365A1 NON-VOLATILE MEMORY DEVICE, WRITING METHOD, AND STORAGE DEVICE Public/Granted day:2021-05-06
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