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公开(公告)号：US11238927B2
公开(公告)日：2022-02-01
申请号：US16881351
申请日：2020-05-22
发明人： Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
IPC分类号： G11C13/00 , G11C11/408 , G11C11/56 , G11C11/4074 , G11C11/4094
摘要： A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.
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公开(公告)号：US11636895B2
公开(公告)日：2023-04-25
申请号：US16870506
申请日：2020-05-08
发明人： Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
摘要： A writing method for a non-volatile memory device includes; performing a sensing operation, comparing write data with read data retrieved by the sensing operation, determining whether the write data is set state when the write data and the read data are the same, performing a set operation when the write data is set state, and not performing a write operation when the write data is not set data.
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公开(公告)号：US20210118485A1
公开(公告)日：2021-04-22
申请号：US16881351
申请日：2020-05-22
发明人： Cheaouk Lim , Jung Sunwoo , Kwangjin Lee
IPC分类号： G11C11/408 , G11C11/4094 , G11C11/4074 , G11C11/56
摘要： A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.
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