A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.