- 专利标题： Stripped redistrubution-layer fabrication for package-top embedded multi-die interconnect bridge
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申请号： US17200700申请日： 2021-03-12
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公开(公告)号： US11658111B2公开(公告)日： 2023-05-23
- 发明人: Jiun Hann Sir , Poh Boon Khoo , Eng Huat Goh , Amruthavalli Pallavi Alur , Debendra Mallik
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/00
摘要：
An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.
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