Invention Grant
- Patent Title: P-type dipole for p-FET
-
Application No.: US17668992Application Date: 2022-02-10
-
Publication No.: US11658218B2Publication Date: 2023-05-23
- Inventor: Yongjing Lin , Karla M Bernal Ramos , Shih Chung Chen , Yixiong Yang , Lin Dong , Steven C. H. Hung , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/51 ; H01L29/78 ; H01L21/02 ; H01L21/28
Abstract:
Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).
Public/Granted literature
- US20220165854A1 P-Type Dipole For P-FET Public/Granted day:2022-05-26
Information query
IPC分类:
