In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 104 cm−2.