- 专利标题: One-time programmable memory cell and fabrication method thereof
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申请号: US17314061申请日: 2021-05-07
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公开(公告)号: US11665891B2公开(公告)日: 2023-05-30
- 发明人: Kuo-Hsing Lee , Chang-Chien Wong , Sheng-Yuan Hsueh , Ching-Hsiang Tseng , Chi-Horn Pai , Shih-Chieh Hsu
- 申请人: UNITED MICROELECTRONICS CORP.
- 申请人地址: TW Hsin-Chu
- 专利权人: UNITED MICROELECTRONICS CORP.
- 当前专利权人: UNITED MICROELECTRONICS CORP.
- 当前专利权人地址: TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权: CN 2110393219.2 2021.04.13
- 主分类号: H10B20/20
- IPC分类号: H10B20/20
摘要:
A one-time programmable (OTP) memory cell includes a substrate comprising an active area surrounded by an isolation region, a transistor disposed on the active area, and a diffusion-contact fuse electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region.
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