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    ONE-TIME PROGRAMMABLE MEMORY STRUCTURE
    4.
    发明公开
    ONE-TIME PROGRAMMABLE MEMORY STRUCTURE 审中-公开

    公开(公告)号：US20240015958A1

    公开(公告)日：2024-01-11

    申请号：US18470447

    申请日：2023-09-20

    申请人： United Microelectronics Corp.

    发明人： Kuo-Hsing Lee ,  Chi-Horn Pai ,  Chang Chien Wong ,  Sheng-Yuan Hsueh ,  Ching Hsiang Tseng ,  Shih-Chieh Hsu

    IPC分类号： H10B20/25

    CPC分类号： H10B20/25

    摘要： A one-time programmable memory structure comprises: A transistor includes a gate. A capacitor includes a first electrode, a second electrode, and an insulating layer. The second electrode is disposed on the first electrode. A top surface of the first electrode and a top surface of the gate are located on a same plane perpendicular to a direction of the first electrode toward the second electrode. An interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode. A resistor comprises a conductive layer. Top and bottom surfaces of the conductive layer are respectively located on a same plane, perpendicular to the direction of the first electrode toward the second electrode, with the top and bottom surfaces of the gate.

    One-time programmable memory structure
    6.
    发明授权
    One-time programmable memory structure 有权

    公开(公告)号：US11825648B2

    公开(公告)日：2023-11-21

    申请号：US17323863

    申请日：2021-05-18

    申请人： United Microelectronics Corp.

    发明人： Kuo-Hsing Lee ,  Chi-Horn Pai ,  Chang Chien Wong ,  Sheng-Yuan Hsueh ,  Ching Hsiang Tseng ,  Shih-Chieh Hsu

    IPC分类号： H10B20/20

    CPC分类号： H10B20/20

    摘要： A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed above the substrate. The second electrode is disposed on the first electrode. The first electrode is located between the second electrode and the substrate. The insulating layer is disposed between the first electrode and the second electrode. The interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode.

    ONE-TIME PROGRAMMABLE MEMORY STRUCTURE
    9.
    发明申请
    ONE-TIME PROGRAMMABLE MEMORY STRUCTURE 有权

    公开(公告)号：US20220336479A1

    公开(公告)日：2022-10-20

    申请号：US17323863

    申请日：2021-05-18

    申请人： United Microelectronics Corp.

    发明人： Kuo-Hsing Lee ,  Chi-Horn Pai ,  Chang Chien Wong ,  Sheng-Yuan Hsueh ,  Ching Hsiang Tseng ,  Shih-Chieh Hsu

    IPC分类号： H01L27/112

    摘要： A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed above the substrate. The second electrode is disposed on the first electrode. The first electrode is located between the second electrode and the substrate. The insulating layer is disposed between the first electrode and the second electrode. The interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode.