发明授权
- 专利标题： Self aligned pattern formation post spacer etchback in tight pitch configurations
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申请号： US17328569申请日： 2021-05-24
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公开(公告)号： US11670510B2公开(公告)日： 2023-06-06
- 发明人: Sean D. Burns , Lawrence A. Clevenger , Matthew E. Colburn , Nelson M. Felix , Sivananda K. Kanakasabapathy , Christopher J. Penny , Roger A. Quon , Nicole A. Saulnier
- 申请人： Tessera LLC
- 申请人地址： US CA San Jose
- 专利权人： Tessera LLC
- 当前专利权人： Tessera LLC
- 当前专利权人地址： US CA San Jose
- 代理机构： Haley Guiliano LLP
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/311 ; H01L21/768 ; H01L23/528 ; H01L21/3213 ; H01L21/31 ; H01L21/027 ; H01L45/00 ; H01L21/28 ; H01L51/00
摘要：
A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.
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