Invention Grant
- Patent Title: Electrostatic discharge protection circuit
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Application No.: US17836899Application Date: 2022-06-09
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Publication No.: US11676959B2Publication Date: 2023-06-13
- Inventor: Ming-Fu Tsai , Tzu-Heng Chang , Yu-Ti Su , Kai-Ping Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04

Abstract:
An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.
Public/Granted literature
- US20220302105A1 NOVEL ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2022-09-22
Information query
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