公开(公告)号：US11676959B2

公开(公告)日：2023-06-13

申请号：US17836899

申请日：2022-06-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Fu Tsai ,  Tzu-Heng Chang ,  Yu-Ti Su ,  Kai-Ping Huang

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0266 ,  H01L27/0285 ,  H01L27/0296 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.