Invention Grant
- Patent Title: Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
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Application No.: US16833614Application Date: 2020-03-29
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Publication No.: US11677042B2Publication Date: 2023-06-13
- Inventor: Markus Broell , Michael Grundmann , David Hwang , Stephan Lutgen , Brian Matthew Mcskimming , Anurag Tyagi
- Applicant: Meta Platforms Technologies, LLC
- Applicant Address: US CA Menlo Park
- Assignee: META PLATFORMS TECHNOLOGIES, LLC
- Current Assignee: META PLATFORMS TECHNOLOGIES, LLC
- Current Assignee Address: US CA Menlo Park
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/00 ; H01L27/15

Abstract:
Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.
Public/Granted literature
- US20200313036A1 REGROWTH OF EPITAXIAL LAYER FOR SURFACE RECOMBINATION VELOCITY REDUCTION IN LIGHT EMITTING DIODES Public/Granted day:2020-10-01
Information query
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