公开(公告)号：US11677042B2

公开(公告)日：2023-06-13

申请号：US16833614

申请日：2020-03-29

Applicant: Meta Platforms Technologies, LLC

Inventor： Markus Broell ,  Michael Grundmann ,  David Hwang ,  Stephan Lutgen ,  Brian Matthew Mcskimming ,  Anurag Tyagi

IPC: H01L33/32 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/0095 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/32

Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

公开(公告)号：US12021168B1

公开(公告)日：2024-06-25

申请号：US18160911

申请日：2023-01-27

Applicant: Meta Platforms Technologies, LLC

Inventor： Thomas Lauermann ,  Stephan Lutgen ,  David Hwang

IPC: H01L33/00 ,  G02B27/01 ,  H01L33/24 ,  H01L33/44 ,  H10K50/80

CPC classification number: H01L33/24 ,  G02B27/0172 ,  H01L33/44 ,  H10K50/80

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method of forming an LED involves forming a semiconductor structure on a substrate. The semiconductor structure includes a p-side semiconductor layer, an n-side semiconductor layer, and an active light emitting layer between the p-side semiconductor layer and the n-side semiconductor layer. The semiconductor structure is also formed to include a light outcoupling surface facing the substrate. The light outcoupling surface has a diameter less than twice an electron diffusion length of a material of the semiconductor structure. The method further involves implanting ions in an outer region of the semiconductor structure, then annealing the outer region after the ions have been implanted. The annealing causes the ions to intermix with atoms within the outer region, thereby increasing a bandgap of the outer region.

公开(公告)号：US11581457B1

公开(公告)日：2023-02-14

申请号：US17242002

申请日：2021-04-27

Applicant: Meta Platforms Technologies, LLC

Inventor： Thomas Lauermann ,  Stephan Lutgen ,  David Hwang

IPC: H01L33/00 ,  H01L51/00 ,  G02B27/00 ,  H01L33/24 ,  H01L51/52 ,  G02B27/01 ,  H01L33/44

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.