Invention Grant
- Patent Title: Series shunt biasing method to reduce parasitic loss in a radio frequency switch
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Application No.: US17150610Application Date: 2021-01-15
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Publication No.: US11683065B2Publication Date: 2023-06-20
- Inventor: Ravi Pramod Kumar Vedula , George Pete Imthurn , Anton Arriagada , Sinan Goktepeli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H03K17/687
Abstract:
A radio frequency (RF) switch includes switch transistors coupled in series. The RF switch includes a distributed gate bias network coupled to gate electrodes of the switch transistors. The RF switch also includes a distributed body bias network coupled to body electrodes of the switch transistors.
Public/Granted literature
- US20210351811A1 SERIES SHUNT BIASING METHOD TO REDUCE PARASITIC LOSS IN A RADIO FREQUENCY SWITCH Public/Granted day:2021-11-11
Information query
