Invention Grant
- Patent Title: Memory controller, storage device and memory system
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Application No.: US17321919Application Date: 2021-05-17
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Publication No.: US11704064B2Publication Date: 2023-07-18
- Inventor: Choongeui Lee , Chulseung Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20200084938 2020.07.09
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G06F3/06 ; G06F13/16 ; G11C7/10

Abstract:
A memory controller configured to control a non-volatile memory device includes: a signal generator configured to generate a plurality of control signals comprising a first signal and a second control signal; a core configured to provide a command for an operation of the non-volatile device; and a controller interface circuit configured to interface with the non-volatile memory device, wherein the controller interface circuit comprises a first transmitter connected to a first signal line and a second signal line; and a first receiver connected to the first signal line, and the first control signal and the second control signal are respectively transmitted to the non-volatile memory device through the first signal line and the second signal line.
Public/Granted literature
- US20220011978A1 MEMORY CONTROLLER, STORAGE DEVICE AND MEMORY SYSTEM Public/Granted day:2022-01-13
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