Invention Grant
- Patent Title: Assemblies having conductive structures with three or more different materials
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Application No.: US17180312Application Date: 2021-02-19
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Publication No.: US11705500B2Publication Date: 2023-07-18
- Inventor: David Ross Economy , Rita J. Klein , Jordan D. Greenlee , John Mark Meldrim , Brenda D. Kraus , Everett A. McTeer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L27/11519 ; H01L27/11556 ; H01L27/11582 ; H01L27/11565 ; H10B41/10 ; H10B41/27 ; H10B43/10 ; H10B43/27 ; H10B41/35 ; H10B43/35
Abstract:
Some embodiments include a memory array having a vertical stack of alternating insulative levels and control gate levels. Channel material extends vertically along the stack. The control gate levels comprising conductive regions. The conductive regions include at least three different materials. Charge-storage regions are adjacent the control gate levels. Charge-blocking regions are between the charge-storage regions and the conductive regions.
Public/Granted literature
- US20210202710A1 Assemblies Having Conductive Structures with Three or More Different Materials Public/Granted day:2021-07-01
Information query
IPC分类:
