Invention Grant
- Patent Title: RF circuit and enclosure having a micromachined interior using semiconductor fabrication
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Application No.: US17896425Application Date: 2022-08-26
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Publication No.: US11706851B2Publication Date: 2023-07-18
- Inventor: Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martin E Roden
- Applicant: Northrop Grumman Systems Corporation
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumann Systems Corporation
- Current Assignee: Northrop Grumann Systems Corporation
- Current Assignee Address: US WV Falls Church
- Agency: McCracken & Gillen LLC
- Main IPC: H05B6/68
- IPC: H05B6/68 ; H05B6/80 ; H01P1/205

Abstract:
An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
Public/Granted literature
- US20220408526A1 RF CIRCUIT AND ENCLOSURE HAVING A MICROMACHINED INTERIOR USING SEMICONDUCTOR FABRICATION Public/Granted day:2022-12-22
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