-
公开(公告)号：US11706851B2
公开(公告)日：2023-07-18
申请号：US17896425
申请日：2022-08-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martin E Roden
CPC classification number: H05B6/686 , H05B6/80 , H01P1/2053
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
-
2.发明公开公开(公告)号：US20240106123A1
公开(公告)日：2024-03-28
申请号：US17899750
申请日：2022-08-31
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T Kunkee
IPC: H01Q9/04 , C23C14/02 , C23C14/18 , C23C14/34 , C23C28/02 , C25D3/48 , C25D5/54 , C25D7/12 , H01Q1/48
CPC classification number: H01Q9/0407 , C23C14/022 , C23C14/185 , C23C14/34 , C23C28/023 , C25D3/48 , C25D5/54 , C25D7/123 , H01Q1/48
Abstract: An exemplary RF module includes a dielectric substrate with metal traces on one surface that connect high frequency components and provide reference ground. Other metal traces on the other surface of the substrate also provide high frequency transmission lines and reference ground. An enclosure made using semiconductor manufacturing technology is mounted to the substrate and has conductive interior recesses defined by extending walls that are connected to the reference ground. The recesses surround the respective components and provide electromagnetic shielding. The dimensional precision in the location and smoothness of the walls and recesses due to the semiconductor manufacturing technology provides repeatable unit-to-unit RF characteristics of the RF module. One way of mounting the enclosure to the substrate uses a plurality of metal bonding bumps extending outwardly from the walls to engage reference ground metal traces on the substrate. Applied pressure deforms the bonding bumps to form a metal-to-metal bond.
-
3.发明授权公开(公告)号：US12126098B2
公开(公告)日：2024-10-22
申请号：US17899750
申请日：2022-08-31
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T Kunkee
IPC: H01Q9/04 , C23C14/02 , C23C14/18 , C23C14/34 , C23C28/02 , C25D3/48 , C25D5/54 , C25D7/12 , H01Q1/48
CPC classification number: H01Q9/0407 , C23C14/022 , C23C14/185 , C23C14/34 , C23C28/023 , C25D3/48 , C25D5/54 , C25D7/123 , H01Q1/48
Abstract: An exemplary RF module includes a dielectric substrate with metal traces on one surface that connect high frequency components and provide reference ground. Other metal traces on the other surface of the substrate also provide high frequency transmission lines and reference ground. An enclosure made using semiconductor manufacturing technology is mounted to the substrate and has conductive interior recesses defined by extending walls that are connected to the reference ground. The recesses surround the respective components and provide electromagnetic shielding. The dimensional precision in the location and smoothness of the walls and recesses due to the semiconductor manufacturing technology provides repeatable unit-to-unit RF characteristics of the RF module. One way of mounting the enclosure to the substrate uses a plurality of metal bonding bumps extending outwardly from the walls to engage reference ground metal traces on the substrate. Applied pressure deforms the bonding bumps to form a metal-to-metal bond.
-
公开(公告)号：US11470695B2
公开(公告)日：2022-10-11
申请号：US16860642
申请日：2020-04-28
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martn E Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
-
-
-
Search Results
4
records
(took 0.032 seconds)
