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公开(公告)号：US20140254979A1
公开(公告)日：2014-09-11
申请号：US14149965
申请日：2014-01-08
Applicant: Northrop Grumman Systems Corporation
Inventor： Chunbo Zhang , Peter Ngo , Gershon Akerling , Kevin M. Leong , Patty Chang-Chien , Kelly J. Hennig , William R. Deal
IPC: G02B6/42 , G02B6/13 , H01L21/762
CPC classification number: H01L27/14685 , H01L21/76254 , H01L23/055 , H01L23/147 , H01L23/66 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L27/14687 , H01L31/186 , H01L31/1876 , H01L2223/6627 , H01L2223/6633 , H01L2223/6677 , H01L2223/6683 , H01L2224/0401 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/81022 , H01L2224/81024 , H01L2224/81054 , H01L2224/81191 , H01L2224/81192 , H01L2224/81204 , H01L2224/81805 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2924/10329 , H01L2924/10335 , H01L2924/12032 , H01L2924/13064 , H01L2924/14215 , H01L2924/1423 , H01L2924/15313 , H01L2924/157 , H01L2924/37001 , H01P11/002 , H01Q13/02 , H01Q23/00 , H01L2924/00 , H01L2224/03 , H01L2224/81 , H01L2924/01079
Abstract: A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.
Abstract translation: 公开了一种用于将单个III-V MMIC集成到微加工波导封装中的方法和装置。 MMIC在集成之前进行筛选，仅允许已知的芯片集成，从而提高产量。 该方法和装置用于实现用于亚毫米波（SMMW）相机的微集成焦平面阵列（mFPA）技术，尽管许多其他应用是可能的。 不同技术的MMIC可以集成到相同的微加工包装中，从而实现与多晶圆WLP集成相同的技术集成水平。
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公开(公告)号：US20220408526A1
公开(公告)日：2022-12-22
申请号：US17896425
申请日：2022-08-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martin E. Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US10438919B1
公开(公告)日：2019-10-08
申请号：US15195487
申请日：2016-06-28
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Victor J. Watson , Chunbo Zhang
Abstract: A press including a passive load leveler for bonding integrated circuit wafers, chips or substrates. The press includes a press frame, a press ram moveable relative to the frame, a first platen coupled to the press ram, and a second platen coupled to the press frame. The load leveler is coupled between the press frame and the second platen, and includes a main body having a first surface coupled to the press frame a plurality of pistons extending from the main body through a second surface and being in contact with the second platen. Each of the pistons is positioned within a piston chamber that is in fluid communication with a network of channels within the main body, where the pistons move relative to each other through a working fluid within the channels so as to maintain the first and second platens parallel to each other under the ram pressure.
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公开(公告)号：US11470695B2
公开(公告)日：2022-10-11
申请号：US16860642
申请日：2020-04-28
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martn E Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US20210337638A1
公开(公告)日：2021-10-28
申请号：US16860642
申请日：2020-04-28
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martn E. Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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Patent Agency Ranking
公开(公告)号：US10132712B1
公开(公告)日：2018-11-20
申请号：US15265135
申请日：2016-09-14
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Chunbo Zhang , Phuong Nguyen , Xianglin Zeng , Maria L. Tenorio
Abstract: A sensor assembly for determining whether a hermetically sealed cavity between opposing substrate wafers in a wafer level packaged (WLP) chip is leaking. The sensor assembly includes a thermal insulating layer provided within the cavity, and a heater and temperature sensor deposited on the insulation layer. The thermal insulating layer is made of a suitable dielectric that is compatible with WLP and MMIC fabrication processes and can be, for example, benzocyclobutene (BCB) or polyimide. The sensor is responsive to a current that heats the thermal insulation layer so that heat dissipated by the thermal insulation layer is drawn away by gas between the layer and the substrate that determines the temperature of the sensor, which is detected.
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公开(公告)号：US09478458B2
公开(公告)日：2016-10-25
申请号：US14149965
申请日：2014-01-08
Applicant: Northrop Grumman Systems Corporation
Inventor： Chunbo Zhang , Peter Ngo , Gershon Akerling , Kevin M. Leong , Patty Chang-Chien , Kelly J. Hennig , William R. Deal
IPC: H01Q13/02 , H01L21/762 , H01L23/66 , H01Q23/00 , H01L23/055 , H01L23/14 , H01P11/00 , H01L23/00
CPC classification number: H01L27/14685 , H01L21/76254 , H01L23/055 , H01L23/147 , H01L23/66 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L27/14687 , H01L31/186 , H01L31/1876 , H01L2223/6627 , H01L2223/6633 , H01L2223/6677 , H01L2223/6683 , H01L2224/0401 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/81022 , H01L2224/81024 , H01L2224/81054 , H01L2224/81191 , H01L2224/81192 , H01L2224/81204 , H01L2224/81805 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2924/10329 , H01L2924/10335 , H01L2924/12032 , H01L2924/13064 , H01L2924/14215 , H01L2924/1423 , H01L2924/15313 , H01L2924/157 , H01L2924/37001 , H01P11/002 , H01Q13/02 , H01Q23/00 , H01L2924/00 , H01L2224/03 , H01L2224/81 , H01L2924/01079
Abstract: A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.
Abstract translation: 公开了一种用于将单个III-V MMIC集成到微加工波导封装中的方法和装置。 MMIC在集成之前进行筛选，仅允许已知的芯片集成，从而提高产量。 该方法和装置用于实现用于亚毫米波（SMMW）相机的微集成焦平面阵列（mFPA）技术，尽管许多其他应用是可能的。 不同技术的MMIC可以集成到相同的微加工包装中，从而实现与多晶圆WLP集成相同的技术集成水平。
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公开(公告)号：US09960204B2
公开(公告)日：2018-05-01
申请号：US15272913
申请日：2016-09-22
Applicant: Northrop Grumman Systems Corporation
Inventor： Chunbo Zhang , Peter Ngo , Gershon Akerling , Kevin M. Leong , Patty Chang-Chien , Kelly J. Hennig , William R. Deal
IPC: H01Q13/02 , H01L27/146 , H01L21/762 , H01L23/66 , H01Q23/00 , H01P11/00 , H01L31/18 , H01L23/055 , H01L23/14 , H01L23/00
CPC classification number: H01L27/14685 , H01L21/76254 , H01L23/055 , H01L23/147 , H01L23/66 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L27/14687 , H01L31/186 , H01L31/1876 , H01L2223/6627 , H01L2223/6633 , H01L2223/6677 , H01L2223/6683 , H01L2224/0401 , H01L2224/13109 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16235 , H01L2224/81022 , H01L2224/81024 , H01L2224/81054 , H01L2224/81191 , H01L2224/81192 , H01L2224/81204 , H01L2224/81805 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2924/10329 , H01L2924/10335 , H01L2924/12032 , H01L2924/13064 , H01L2924/14215 , H01L2924/1423 , H01L2924/15313 , H01L2924/157 , H01L2924/37001 , H01P11/002 , H01Q13/02 , H01Q23/00 , H01L2924/00 , H01L2224/03 , H01L2224/81 , H01L2924/01079
Abstract: A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration, allowing only known-good die to be integrated, leading to increased yield. The method and apparatus are used to implement a micro-integrated Focal Plane Array (mFPA) technology used for sub millimeter wave (SMMW) cameras, although many other applications are possible. MMICs of different technologies may be integrated into the same micromachined package thus achieving the same level of technology integration as in multi-wafer WLP integration.
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公开(公告)号：US11706851B2
公开(公告)日：2023-07-18
申请号：US17896425
申请日：2022-08-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martin E Roden
CPC classification number: H05B6/686 , H05B6/80 , H01P1/2053
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US20170271114A1
公开(公告)日：2017-09-21
申请号：US15073372
申请日：2016-03-17
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： XING LAN , Chunbo Zhang
CPC classification number: H01H59/0009 , B81B2201/014 , B81B2201/016 , B81C1/00373 , H01H1/0036 , H01H2001/0052 , H01H2059/0072
Abstract: A method for fabricating an MEMS switch including providing a substrate and printing at least one metal bias electrode, at least one metal connection pad and at least one metal contact pad on the substrate. The method then prints a sacrificial layer on the substrate and over the at least one bias electrode, and prints a flexible beam structure on the sacrificial layer. The sacrificial layer is then removed by dissolving the sacrificial layer in a wet solution to release the beam structure so that the beam structure is spaced some distance from the at least one bias electrode and the contact pad.
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