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公开(公告)号：US11706851B2
公开(公告)日：2023-07-18
申请号：US17896425
申请日：2022-08-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martin E Roden
CPC classification number: H05B6/686 , H05B6/80 , H01P1/2053
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US20220408526A1
公开(公告)日：2022-12-22
申请号：US17896425
申请日：2022-08-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martin E. Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. A top enclosure encloses the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the top enclosure engage reference ground metal traces on respective surface of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US20190131681A1
公开(公告)日：2019-05-02
申请号：US15794078
申请日：2017-10-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Dino Ferizovic , Alexis Zamora , Benjamin Poust
Abstract: An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.
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Patent Agency Ranking
公开(公告)号：US09774067B2
公开(公告)日：2017-09-26
申请号：US14708838
申请日：2015-05-11
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Benjamin D. Poust , Michael Conrad Battung , Dino Ferizovic , Patty P. Chang-Chien
CPC classification number: H01P1/14 , H01L23/60 , H01L2924/0002 , H01T4/08 , H01T4/16 , H01T19/04 , H03G11/002 , H03G11/004 , H01L2924/00
Abstract: A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.
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公开(公告)号：US10340570B2
公开(公告)日：2019-07-02
申请号：US15794078
申请日：2017-10-26
Applicant: Northrop Grumman Systems Corporation
Inventor： Dino Ferizovic , Alexis Zamora , Benjamin Poust
Abstract: An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.
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公开(公告)号：US11470695B2
公开(公告)日：2022-10-11
申请号：US16860642
申请日：2020-04-28
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S Tsai , Ming-Jong Shiau , Daniel R Scherrer , Martn E Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US20210337638A1
公开(公告)日：2021-10-28
申请号：US16860642
申请日：2020-04-28
Applicant: Northrop Grumman Systems Corporation
Inventor： Elizabeth T. Kunkee , Dah-Weih Duan , Dino Ferizovic , Chunbo Zhang , Greta S. Tsai , Ming-Jong Shiau , Daniel R. Scherrer , Martn E. Roden
Abstract: An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
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公开(公告)号：US09484284B1
公开(公告)日：2016-11-01
申请号：US15072242
申请日：2016-03-16
Inventor： Vincent Gambin , Benjamin D. Poust , Dino Ferizovic , Stanton E. Weaver , Gary D. Mandrusiak
IPC: H01L33/32 , H01L29/20 , H01L21/02 , H01L23/473 , H01L29/205 , H01L29/778 , H01L23/367 , H01L23/373 , H01L27/095 , H01L23/66 , H03F3/213 , H03F3/193 , H03F3/195
CPC classification number: H01L23/4735 , H01L23/367 , H01L23/3732 , H01L23/66 , H01L27/095 , H01L29/0657 , H01L29/2003 , H01L29/778 , H01L2223/6644 , H01L2223/6683
Abstract: A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
Abstract translation: 一种由在其中形成有多个微通道的SiC衬底组成的MMIC功率放大器电路组件，其中金属层设置在每个微通道内。 在基板上设置多个GaN HEMT器件，其中每个HEMT器件直接与微通道相对。 硅歧管联接到衬底并且包括形成在其中的多个微加工通道，其包括直接邻近每个微通道定位的喷射冲击通道，与每个微通道相邻直接定位的返回通道，向冷却流体供应冷却流体的供应通道 冲击通道和从供应通道收集加热的冷却流体的返回通道，使得冲击射流被引导到金刚石层以去除由HEMT装置产生的热量。
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