Invention Grant
- Patent Title: Programmable memory and forming method thereof
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Application No.: US17381219Application Date: 2021-07-21
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Publication No.: US11706915B2Publication Date: 2023-07-18
- Inventor: Hsueh-Chun Hsiao , Yi-Ning Peng , Tzu-Yun Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW 0122630 2021.06.21
- Main IPC: H10B41/30
- IPC: H10B41/30 ; H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L21/28 ; H01L29/788

Abstract:
An array of electrically erasable programmable read only memory (EEPROM) includes a first row of floating gate, a second row of floating gate, two spacers, a first row of word line and a second row of word line. The first row of floating gate and the second row of floating gate are disposed on a substrate along a first direction. The two spacers are disposed between and parallel to the first row of floating gate and the second row of floating gate. The first row of word line is sandwiched by one of the spacers and the adjacent first row of floating gate, and the second row of word line is sandwiched by the other one of the spacers and the adjacent second row of floating gate. The present invention also provides a method of forming said array of electrically erasable programmable read only memory (EEPROM).
Public/Granted literature
- US20220406800A1 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM) AND FORMING METHOD THEREOF Public/Granted day:2022-12-22
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