Mitigating a voltage condition of a memory cell in a memory sub-system
Abstract:
A determination that a first programming operation has been performed on a particular memory cell can be made. A determination can be made, based on one or more threshold criteria, whether the particular memory cell has transitioned from a state associated with a decreased error rate to another state associated with an increased error rate. In response to determining that the particular memory cell has transitioned from the state associated with the decreased error rate to the another state associated with the increased error rate, an operation can be performed on the particular memory cell to transition the particular memory cell from the another state associated with the increased error rate to the state associated with the decreased error rate.
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