Invention Grant
- Patent Title: Sputtering apparatus and method for fabricating semiconductor device using the same
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Application No.: US17721428Application Date: 2022-04-15
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Publication No.: US11725271B2Publication Date: 2023-08-15
- Inventor: Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190082699 2019.07.09
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/35 ; H01J37/32 ; C23C14/08 ; H01J37/34
Abstract:
A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
Public/Granted literature
- US20220235450A1 SPUTTERING APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2022-07-28
Information query
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