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公开(公告)号：US20190140163A1
公开(公告)日：2019-05-09
申请号：US16021708
申请日：2018-06-28
发明人： Sangjun Yun , Sang-Kuk Kim , Jae Hoon Kim , Eunsun Noh , Se Chung Oh , Sung Chul Lee , Daeeun Jeong
摘要： Magnetic memory devices are provided. A magnetic memory device includes a first electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, which are sequentially stacked on the first electrode, and a second electrode on the magnetic tunnel junction pattern. A surface binding energy of the first electrode and/or the second electrode with respect to the magnetic tunnel junction pattern is relatively low.
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公开(公告)号：US11735241B2
公开(公告)日：2023-08-22
申请号：US17202648
申请日：2021-03-16
发明人： Hee Ju Shin , Sang Hwan Park , Se Chung Oh , Ki Woong Kim , Hyeon Woo Seo
CPC分类号： G11C11/161 , H01F10/3286 , H10N50/01 , H10N50/10 , H10N50/80 , H10N50/85
摘要： A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.
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公开(公告)号：US11706931B2
公开(公告)日：2023-07-18
申请号：US17230029
申请日：2021-04-14
发明人： Jae Hoon Kim , Sang Hwan Park , Yong-Sung Park , Hyeonwoo Seo , Se Chung Oh , Hyun Cho
CPC分类号： H10B61/22 , H10B63/34 , H10B63/845
摘要： A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.
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公开(公告)号：US11725271B2
公开(公告)日：2023-08-15
申请号：US17721428
申请日：2022-04-15
发明人： Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
CPC分类号： C23C14/3464 , C23C14/08 , C23C14/352 , H01J37/32082 , H01J37/32155 , H01J37/32715 , H01J37/3417
摘要： A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
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公开(公告)号：US20210010127A1
公开(公告)日：2021-01-14
申请号：US16793096
申请日：2020-02-18
发明人： Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
摘要： A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
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公开(公告)号：US11683992B2
公开(公告)日：2023-06-20
申请号：US17134456
申请日：2020-12-27
发明人： Hyungjong Jeong , Ki Woong Kim , Younghyun Kim , Junghwan Park , Byoungjae Bae , Se Chung Oh , Jungmin Lee , Kyungil Hong
CPC分类号： H01L43/02 , H01L27/222 , H01L43/12
摘要： A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.
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7.发明授权公开(公告)号：US11600662B2
公开(公告)日：2023-03-07
申请号：US17582628
申请日：2022-01-24
发明人： Junghwan Park , Younghyun Kim , Se Chung Oh , Jungmin Lee , Kyungil Hong
摘要： Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.
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公开(公告)号：US11339467B2
公开(公告)日：2022-05-24
申请号：US16793096
申请日：2020-02-18
发明人： Ki Woong Kim , Hyeon Woo Seo , Hee Ju Shin , Se Chung Oh , Hyun Cho
摘要： A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
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9.发明授权公开(公告)号：US11271037B2
公开(公告)日：2022-03-08
申请号：US16803574
申请日：2020-02-27
发明人： Junghwan Park , Younghyun Kim , Se Chung Oh , Jungmin Lee , Kyungil Hong
摘要： Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.
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公开(公告)号：US11170832B2
公开(公告)日：2021-11-09
申请号：US16552110
申请日：2019-08-27
发明人： Ki Woong Kim , Juhyun Kim , Se Chung Oh , Ung Hwan Pi
摘要： A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.
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