- 专利标题： Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
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申请号： US17376403申请日： 2021-07-15
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公开(公告)号： US11728160B2公开(公告)日： 2023-08-15
- 发明人: Younsoo Kim , Haeryong Kim , Seungmin Ryu , Sunmin Moon , Jeonggyu Song , Changsu Woo , Kyooho Jung , Younjoung Cho
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR 20190091159 2019.07.26
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
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