Invention Grant
- Patent Title: Semiconductor die orifices containing metallic nanowires
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Application No.: US16843618Application Date: 2020-04-08
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Publication No.: US11728242B2Publication Date: 2023-08-15
- Inventor: Benjamin Stassen Cook , Ralf Jakobskrueger Muenster , Sreenivasan Kalyani Koduri
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Ronald O. Neerings; Frank D. Cimino
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/495 ; H01L23/00 ; H01L21/288
Abstract:
In some examples, a semiconductor package comprises a semiconductor die having a first surface and a second surface opposing the first surface. The package comprises an orifice extending through a thickness of the semiconductor die from the first surface to the second surface. The package comprises a set of metallic nanowires positioned within the orifice and extending through the thickness of the semiconductor die from the first surface to the second surface.
Public/Granted literature
- US20200321267A1 SEMICONDUCTOR DIE ORIFICES CONTAINING METALLIC NANOWIRES Public/Granted day:2020-10-08
Information query
IPC分类:
