Invention Grant
- Patent Title: Shielded semiconductor packages with open terminals and methods of making via two-step process
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Application No.: US17205779Application Date: 2021-03-18
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Publication No.: US11728281B2Publication Date: 2023-08-15
- Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi
- Applicant: STATS ChipPAC Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Atkins and Associates, P.C.
- Agent Brian M. Kaufman; Robert D. Atkins
- The original application number of the division: US16234233 2018.12.27
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/48 ; H01L23/552 ; H01L23/31 ; H01R43/20 ; H01R43/26 ; H01R12/79 ; H01R12/52

Abstract:
A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.
Public/Granted literature
- US20210210437A1 Shielded Semiconductor Packages with Open Terminals and Methods of Making Via Two-Step Process Public/Granted day:2021-07-08
Information query
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