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公开(公告)号:US12211804B2
公开(公告)日:2025-01-28
申请号:US18429080
申请日:2024-01-31
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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公开(公告)号:US11728281B2
公开(公告)日:2023-08-15
申请号:US17205779
申请日:2021-03-18
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi
CPC classification number: H01L23/552 , H01L21/4814 , H01L21/4853 , H01L21/563 , H01L23/3121 , H01R12/52 , H01R12/79 , H01R43/205 , H01R43/26 , H01L21/565
Abstract: A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.
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公开(公告)号:US20220270983A1
公开(公告)日:2022-08-25
申请号:US17662977
申请日:2022-05-11
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: Dong Won Son , Byeonghoon Kim , Sung Ho Choi , Sung Jae Lim , Jong Ho Shin , SungWon Cho , ChangOh Kim , KyoungHee Park
IPC: H01L23/552 , H01L23/31 , H01L23/00 , H01L23/498 , H01L23/367
Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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公开(公告)号:US11342278B2
公开(公告)日:2022-05-24
申请号:US17008997
申请日:2020-09-01
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: SungWon Cho , ChangOh Kim , Il Kwon Shim , InSang Yoon , KyoungHee Park
IPC: H01L23/34 , H01L23/28 , H01L21/00 , H05K7/20 , H01L23/552 , H01L23/00 , H01L23/36 , H01L23/522 , H01L23/50 , H01L23/60 , H01L23/498 , H01L27/02 , H01L23/31 , H01L23/367
Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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公开(公告)号:US20210335724A1
公开(公告)日:2021-10-28
申请号:US17369654
申请日:2021-07-07
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , KyoWang Koo , SungWon Cho
IPC: H01L23/552 , H01L23/31 , H01L23/04 , H01L25/065 , H01L21/78 , H01L25/00 , H01L21/56
Abstract: A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.
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公开(公告)号:US10910322B2
公开(公告)日:2021-02-02
申请号:US16220934
申请日:2018-12-14
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
IPC: H01L21/00 , H01L23/552 , H01L21/311 , H01L21/56 , H01L23/31 , H01L23/00 , H01L23/66
Abstract: A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
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公开(公告)号:US20200075502A1
公开(公告)日:2020-03-05
申请号:US16116485
申请日:2018-08-29
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoungHee Park , KyoWang Koo , SungWon Cho
IPC: H01L23/552 , H01L23/31 , H01L23/04 , H01L21/56 , H01L21/78 , H01L25/00 , H01L25/065
Abstract: A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.
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公开(公告)号:US11935840B2
公开(公告)日:2024-03-19
申请号:US17817461
申请日:2022-08-04
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
CPC classification number: H01L23/552 , H01L21/56 , H01L23/28 , H01L23/66 , H01L24/94 , H01L25/50 , H01L2021/60112
Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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公开(公告)号:US20230402401A1
公开(公告)日:2023-12-14
申请号:US18455419
申请日:2023-08-24
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
IPC: H01L23/552 , H01L21/311 , H01L21/56 , H01L23/31 , H01L23/00 , H01L23/66
CPC classification number: H01L23/552 , H01L21/31144 , H01L21/565 , H01L23/3128 , H01L24/09 , H01L24/17 , H01L23/66 , H01L21/563
Abstract: A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
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公开(公告)号:US20220246541A1
公开(公告)日:2022-08-04
申请号:US17660093
申请日:2022-04-21
Applicant: STATS ChipPAC Pte. Ltd.
Inventor: SungWon Cho , ChangOh Kim , Il Kwon Shim , InSang Yoon , KyoungHee Park
IPC: H01L23/552 , H01L23/00 , H01L23/36 , H01L23/522 , H01L23/50 , H01L23/60 , H01L23/498 , H01L27/02 , H01L23/31 , H01L23/367
Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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