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公开(公告)号：US11444035B2
公开(公告)日：2022-09-13
申请号：US16991370
申请日：2020-08-12
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
摘要： A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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公开(公告)号：US11145603B2
公开(公告)日：2021-10-12
申请号：US16005387
申请日：2018-06-11
发明人： Byung Joon Han , Il Kwon Shim , KyoungHee Park , Yaojian Lin , KyoWang Koo , In Sang Yoon , SeungYong Chai , SungWon Cho , SungSoo Kim , Hun Teak Lee , DeokKyung Yang
IPC分类号： H01L23/00 , H01L23/552 , H01L23/498 , H01L21/48 , H01L21/683 , H01L23/31 , H01L25/16 , H01L21/56
摘要： An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.
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公开(公告)号：US11935840B2
公开(公告)日：2024-03-19
申请号：US17817461
申请日：2022-08-04
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
CPC分类号： H01L23/552 , H01L21/56 , H01L23/28 , H01L23/66 , H01L24/94 , H01L25/50 , H01L2021/60112
摘要： A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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公开(公告)号：US20230402401A1
公开(公告)日：2023-12-14
申请号：US18455419
申请日：2023-08-24
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
IPC分类号： H01L23/552 , H01L21/311 , H01L21/56 , H01L23/31 , H01L23/00 , H01L23/66
CPC分类号： H01L23/552 , H01L21/31144 , H01L21/565 , H01L23/3128 , H01L24/09 , H01L24/17 , H01L23/66 , H01L21/563
摘要： A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
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5.发明申请公开(公告)号：US20210210437A1
公开(公告)日：2021-07-08
申请号：US17205779
申请日：2021-03-18
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi
IPC分类号： H01L23/552 , H01L23/31 , H01L21/56 , H01L21/48 , H01R43/20 , H01R43/26 , H01R12/79 , H01R12/52
摘要： A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.
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6.发明公开公开(公告)号：US20240258246A1
公开(公告)日：2024-08-01
申请号：US18635819
申请日：2024-04-15
发明人： YongKook Shin , KyoWang Koo , HeeYoun Kim , SeongKuk Kim
IPC分类号： H01L23/552 , H01L21/48 , H01L21/50 , H01L23/31
CPC分类号： H01L23/552 , H01L21/4871 , H01L21/50 , H01L23/3121
摘要： A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.
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公开(公告)号：US20240234291A1
公开(公告)日：2024-07-11
申请号：US18150567
申请日：2023-01-05
发明人： YongMoo Shin , HyunSeok Park , KyoWang Koo , Sinjae Kim
IPC分类号： H01L23/498 , H01L21/48 , H01L25/16
CPC分类号： H01L23/49877 , H01L21/4857 , H01L23/49822 , H01L23/49894 , H01L25/16 , H01L24/16
摘要： A semiconductor device has a one-layer interconnect substrate and electrical component disposed over a first surface of the interconnect substrate. The electrical components can be discrete electrical devices, IPDs, semiconductor die, semiconductor packages, surface mount devices, and RF components. An RDL with a graphene core shell is formed over a second surface of the interconnect substrate. The graphene core shell has a copper core and a graphene coating formed over the copper core. The RDL further has a matrix to embed the graphene core shell. The graphene core shells through RDL form an electrical path. The RDL can be thermoset material or polymer or composite epoxy type matrix. The graphene core shell is embedded within the thermoset material or polymer or composite epoxy type matrix. The RDL with graphene core shell is useful for electrical conductivity and electrical interconnect within an SIP.
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8.发明授权公开(公告)号：US11728281B2
公开(公告)日：2023-08-15
申请号：US17205779
申请日：2021-03-18
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi
IPC分类号： H01L21/56 , H01L21/48 , H01L23/552 , H01L23/31 , H01R43/20 , H01R43/26 , H01R12/79 , H01R12/52
CPC分类号： H01L23/552 , H01L21/4814 , H01L21/4853 , H01L21/563 , H01L23/3121 , H01R12/52 , H01R12/79 , H01R43/205 , H01R43/26 , H01L21/565
摘要： A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.
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公开(公告)号：US20210335724A1
公开(公告)日：2021-10-28
申请号：US17369654
申请日：2021-07-07
发明人： ChangOh Kim , KyoungHee Park , KyoWang Koo , SungWon Cho
IPC分类号： H01L23/552 , H01L23/31 , H01L23/04 , H01L25/065 , H01L21/78 , H01L25/00 , H01L21/56
摘要： A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.
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公开(公告)号：US10910322B2
公开(公告)日：2021-02-02
申请号：US16220934
申请日：2018-12-14
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
IPC分类号： H01L21/00 , H01L23/552 , H01L21/311 , H01L21/56 , H01L23/31 , H01L23/00 , H01L23/66
摘要： A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
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