Invention Grant
- Patent Title: Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device
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Application No.: US17350916Application Date: 2021-06-17
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Publication No.: US11728404B2Publication Date: 2023-08-15
- Inventor: Ferdinando Iucolano , Paolo Badalá
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT 2018000007920 2018.08.07
- The original application number of the division: US16535016 2019.08.07
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/285 ; H01L29/20 ; H01L29/205 ; H01L29/47 ; H01L29/778 ; H01L21/28 ; C23C14/00 ; C23C14/06 ; C23C14/30 ; H01L29/417
Abstract:
An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.
Public/Granted literature
- US20210313446A1 METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CURRENT, AND HEMT DEVICE Public/Granted day:2021-10-07
Information query
IPC分类:
