- 专利标题： Adaptive memory cell write conditions
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申请号： US17698808申请日： 2022-03-18
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公开(公告)号： US11735262B2公开(公告)日： 2023-08-22
- 发明人: Brent Haukness , Zhichao Lu
- 申请人： Hefei Reliance Memory Limited
- 申请人地址： CN Hefei
- 专利权人： Hefei Reliance Memory Limited
- 当前专利权人： Hefei Reliance Memory Limited
- 当前专利权人地址： CN Hefei
- 代理机构： Sheppard Mullin Richter & Hampton LLP
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C11/56
摘要：
A method and related apparatus for using an indication of RRAM cell resistance to determine a write condition are disclosed. A cell characteristic of an RRAM cell may be determined to a higher bit resolution than a data read value. A write condition may be selected for the RRAM cell, based on the cell characteristic. The RRAM cell may be written to, using the selected write condition.
公开/授权文献
- US20220208266A1 ADAPTIVE MEMORY CELL WRITE CONDITIONS 公开/授权日：2022-06-30
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