- 专利标题: High dynamic range CMOS image sensor pixel with reduced metal-insulator-metal lateral overflow integration capacitor lag
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申请号: US17849354申请日: 2022-06-24
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公开(公告)号: US11736833B1公开(公告)日: 2023-08-22
- 发明人: Woon Il Choi
- 申请人: OMNIVISION TECHNOLOGIES, INC.
- 申请人地址: US CA Santa Clara
- 专利权人: OmniVision Technologies, Inc.
- 当前专利权人: OmniVision Technologies, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Perkins Coie LLP
- 主分类号: H04N25/77
- IPC分类号: H04N25/77 ; H04N25/75 ; H04N25/57 ; H04N23/741
摘要:
A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is configured to transfer the image charge from the photodiode to a floating diffusion. A reset transistor coupled between a reset voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) includes an insulating region disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to a bias voltage source, the second metal electrode is selectively coupled to the floating diffusion, and excess image charge photogenerated by the photodiode during an idle period is configured to overflow from the photodiode through the transfer transistor into the floating diffusion.
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